sot23 pnp silicon planar medium power transistor issue 3 - october 1995 j features * low equivalent on resistance r ce(sat) =355m w at 1a* complementary type- fmmt491 partmarking detail - 591 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -60 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -100 na v cb =-60v emitter cut-off current i ebo -100 na v eb =-4v, i c =0 collector-emitter cut-off current i ces -100 na v ces =-60v collector-emitter saturation voltage v ce(sat) -0.3 -0.6 v v i c =-500ma,i b =-50ma* i c =-1a, i b =-100ma* base-emitter saturation voltage v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-1a, v ce =-5v* static forward current transfer ratio h fe 100 100 80 15 300 i c =-1ma, v ce =-5v* i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT591 c b e 3 - 137 FMMT591 3 - 138 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 100 0 300 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 1.2 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25c 0.2 0.3 0.4 0.5 i c /i b =10 10a 1a +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =5v v ce =5v 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 1ma 0.01 i c /i b =50 0.6 0.1 0.2 0.3 0.4 0.5 0.6 typical characteristics
sot23 pnp silicon planar medium power transistor issue 3 - october 1995 j features * low equivalent on resistance r ce(sat) =355m w at 1a* complementary type- fmmt491 partmarking detail - 591 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -60 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -100 na v cb =-60v emitter cut-off current i ebo -100 na v eb =-4v, i c =0 collector-emitter cut-off current i ces -100 na v ces =-60v collector-emitter saturation voltage v ce(sat) -0.3 -0.6 v v i c =-500ma,i b =-50ma* i c =-1a, i b =-100ma* base-emitter saturation voltage v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-1a, v ce =-5v* static forward current transfer ratio h fe 100 100 80 15 300 i c =-1ma, v ce =-5v* i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT591 c b e 3 - 137 FMMT591 3 - 138 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 100 0 300 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 1.2 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25c 0.2 0.3 0.4 0.5 i c /i b =10 10a 1a +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =5v v ce =5v 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 1ma 0.01 i c /i b =50 0.6 0.1 0.2 0.3 0.4 0.5 0.6 typical characteristics
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